Research and
development innovation

World-leading polysilicon production technology

In terms of the polysilicon production technology with independent intellectual property rights, GCL-Poly has made a breakthrough in adopting the silane-based FBR method to produce granular silicon, with the silane conversion rate close to 100%. Compared with the modified Siemens process, FBR method has such advantages as low energy consumption and low cost, and the granular silicon product produced does not need to be broken, the fluidity of granular silicon is good, it’s suitable for RCz or CCz monocrystalline silicon process.

The high-quality granular silicon product meets the demand for monocrystalline silicon materials 

The granular silicon can be produced continuously; it can be used directly without breaking, no secondary pollution. 

The world's advanced FBR system with a single reactor capacity of 5,000 tons per year. 

GCL-Poly has developed GCL polysilicon production technology, which can use TCS efficiently. Compared with the traditional Siemens process, it’s greener and more environmentally friendly.

Full closed-loop polysilicon production technology 

The world’s advanced GCL polysilicon production technology 

The world’s advanced cold hydrogenation system with a single reactor capacity of 250,000 tons per year. 

Continuous CZ (CCz) technology

CCz technology is the ultimate technology of Cz technology. It has the characteristics of continuous feeding and continuous pulling. Compared with the conventional RCz process, this technology can pull out 6-10 monocrystalline silicon rods per furnace. The monocrystalline silicon rods have a narrower resistivity distribution.

The resistivity of monocrystalline silicon rods pulled by CCz technology is very concentrated. In the future N-type battery market, CCz will have obvious technical advantages.

Using continuous feeding, the output per furnace is more than 20% higher than RCz, and the production cost is 10% lower than RCz.

The world’s advanced cold hydrogenation system with a single reactor capacity of 250,000 tons per year. 

Diamond wire slicing technology has continuously broken through the slicing diameter of silicon wafer

achieving the process breakthrough, reducing the silicon material cost and increasing the unity output.

Large-scale wafer cutting technology

Upgrade the equipment structure and optimize the production line process to fully match the technical requirements of M12 large silicon wafer processing size, and realize the whole-process development of M12 silicon wafer from equipment to process.

The slice processing area can achieve the interval-adjustable design scheme to match with the slicing of silicon rods with different sizes

The “reverse cutting” large-size slicing technology exclusively developed by GCL-Poly overcomes the technical difficulties, such as high difficulty in steel wire cutting of large silicon wafers, poor precision of silicon wafers and low yield of processing.

The cutting efficiency is improved and the cutting consumption is reduced by developing key supporting auxiliary materials of large silicon wafers. 

Scientific research base

  • Xuzhou R&D Center
  • American R&D Center
  • Suzhou R&D Center

Xuzhou R&D Center

American R&D Center

Suzhou R&D Center

R&D team

GCL-Poly's scientific research team has the most outstanding photovoltaic experts and scholars in the world, and has formed a three-level technical talent echelon, including Chinese and foreign experts as technology leaders, young scholars with profound overseas research background as backbone, and PhD and master graduates from famous universities as reserve force. GCL-Poly will also continue to attract first-class talents worldwide, commit to building a world-class R&D team, attach importance to the introduction and training of various R&D personnel, and build a broad platform for the growth and development of R&D personnel.

National and Local Joint Engineering Research Center   

National Postdoctoral Research Station   

Jiangsu Provincial Key Laboratory of Silicon-based Electronic Materials   

CNAS Certified GCL Testing Technology Center 

Other technical centers are as follows:

Provincial Quartz Crucible Engineering Research Center Provincial Polycrystalline Black Silicon Wafer Engineering Technology Research Center Provincial Hydrochlorination Technology Engineering Center Provincial Polysilicon Material Engineering Technology Research Center Provincial Silicon Chip Engineering Technology Research Center

Technological achievements

GCL-Poly has accumulatively filed more than 1,100 invention and utility model patents, including more than 650 granted patents, involving FBR granular silicon, modified Siemens polysilicon production method, high-efficiency polysilicon, cast-mono, CCz, silicon wafer slicing process and other technical fields. Many core granted invention patents have provided strong support for GCL's independent intellectual property rights, of which related scientific and technological achievements have won 2 Chinese patent awards and 5 Jiangsu science and technology awards.

Science and technology exchange

Our friendly exchange and cooperation partners are as follows:

  • Chinese Academy of Sciences
  • outheast University
  • Tsinghua University
  • Zhejiang University
  • Wuhan University
  • Nanjing University

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